90512 tkim/o2203 tsim ta-100608 no.7483-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 12A02MH bipolar transistor ? 12v, ? 1a, low v ce ( sat ) pnp single mcph3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? low-frequency ampli er, high-speed switching, small motor drive, muting circuit features ? large current capacity ? low collector-to-emitter saturation voltage (resistance) r ce (sat) typ.=285m [i c =1a, i b =50ma] ? small on-resistance (ron) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo --15 v collector-to-emitter voltage v ceo --12 v emitter-to-base voltage v ebo -- 5 v collector current i c -- 1 a collector current (pulse) i cp -- 2 a collector dissipation p c when mounted on ceramic substrate (600mm 2 0.8mm) 600 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7019a-004 ordering number : en7483a product & package information ? package : mcph3 ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : base 2 : emitter 3 : collector mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 12 3 0 to 0.02 tl 12A02MH-tl-e ak lot no. lot no. 3 2 1
12A02MH no.7483-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = --12v, i e =0a --100 na emitter cutoff current i ebo v eb = --4v, i c =0a --100 na dc current gain h fe v ce = --2v, i c = --10ma 300 700 gain-bandwidth product f t v ce = --2v, i c = --50ma 450 mhz output capacitance cob v cb = --10v, f=1mhz 6 pf collector-to-emitter saturation voltage v ce (sat) i c = --400ma, i b = --20ma --120 --240 mv base-to-emitter saturation voltage v be (sat) i c = --400ma, i b = --20ma --0.9 --1.2 v collector-to-base breakdown voltage v (br)cbo i c = --10 a, i e =0a --15 v collector-to-emitter breakdown voltage v (br)ceo i c = --1ma, r be = --12 v emitter-to-base breakdown voltage v (br)ebo i e = --10 a, i c =0a --5 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg 75 ns fall time t f 15 ns switching time test circuit ordering information device package shipping memo 12A02MH-tl-e mcph3 3,000pcs./reel pb free v r r b v cc = --5v v be =5v ++ 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --400ma collector-to-emitter voltage, v ce -- m v i c -- v ce collector current, i c -- m a base-to-emitter voltage, v be -- v i c -- v be collector current, i c -- m a 0 0 --1000 --200 --100 --200 --300 --400 --500 --600 --700 --800 --900 0 --400 --1200 --600 --800 --1000 --200 --500 --1000 --800 --900 --100 --300 --400 --600 --700 it05094 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 it05095 --20ma --30ma --15ma --10ma --7ma --5ma --3ma --2ma --1ma --0.5ma i b =0ma v ce = --2v 25 c --25 c ta=75 c
12A02MH no.7483-3/6 0 0 20 40 60 80 100 120 600 500 400 300 200 100 700 140 160 mounted on a ceramic board(600mm 2 ? 0.8mm) ambient temperature, ta -- c p c -- ta collector dissipation, p c -- m w it05104 collector current, i c -- m a f t -- i c gain-bandwidth product, f t -- mhz it05101 collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf it05100 collector current, i c -- m a it05098 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv it05099 collector current, i c -- m a v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v --1.0 5 3 --1000 --100 27 5 3 27 5 3 27 --10 27 35 --10 23 --1.0 10 1.0 2 3 2 7 5 3 --1.0 357 --10 2357 2357 2 --100 --1000 --10 --1.0 --0.1 7 5 3 2 7 5 3 2 --1.0 --100 --1000 --10 23 57 23 57 --100 2 --1000 357 --10 7 5 3 2 7 5 3 2 i c / i b =50 ta=75 c 25 c --25 c i c / i b =20 ta= --25 c 25 c 75 c f=1mhz v ce = --2v 100 10 1000 7 5 3 2 7 5 3 2 on-resistance, ron -- f=1mhz --0.1 ron -- i b it06091 2 0.1 7 5 3 2 1.0 7 5 3 10 3 2 57 3 2 57 --1.0 --10 out in 1k 1k i b base current, i b -- ma collector current, i c -- m a h fe -- i c dc current gain, h fe collector current, i c -- m a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv --1.0 23 57 23 57 23 57 --10 --100 2 3 5 7 100 1000 --100 --1000 --1.0 2 3 5 --10 7 2 3 5 7 2 3 5 7 --1000 it05096 it05097 --1.0 23 57 --10 23 57 23 57 --100 --1000 --25 c ta=75 c v ce = --2v i c / i b =20 ta=75 c 25 c --25 c 25 c
12A02MH no.7483-4/6 embossed taping speci cation 12A02MH-tl-e
12A02MH no.7483-5/6 outline drawing land pattern example 12A02MH-tl-e mass (g) unit 0.007 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
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